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FS100R12KT4_B11 Datasheet PDF

Infineon Technologies FS100R12KT4_B11

IGBT-Module

Part No. FS100R12KT4_B11
Datasheet FS100R12KT4_B11 Download
Manufacturer
Infineon Technologies
Description IGBT-Module
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FS100R12KT4_B11 datasheet page 1 preview
Technische Information / Technical Information IGBT-Module IGBT-modules FS100R12KT4_B11 EconoPACK™2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPACK™2 module with trench/fieldstop IGBT4 and Emitter Controlled4 Diode IGBT,Wechselrichter / IGBT,Inverter Höchstzulässige Werte / Maximum Rated Values Vorläufige Daten Preliminary Data Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V Kollektor-Dauergleichstrom Continuous DC collector current TC = 95°C, Tvj max = 175°C IC nom 100 A Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 200 A Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 515 W Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES +/-20 V Charakteristische Werte / Characteristic Values Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 1...
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