FS200R07N3E4R_B11
Key Features
- Increasedblockingvoltagecapabilityto650V
- High Short Circuit Capability, Self Limiting Short CircuitCurrent
- TrenchIGBT4
- Tvjop=150°C MechanicalFeatures
- IntegratedNTCtemperaturesensor
- CopperBasePlate
- SolderContactTechnology
- PressFITContactTechnology
- StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:AS approvedby:RS ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2013-11-05 revision:2.0 ULapproved(E83335) 1 TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS200R07N3E4R_B11 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 60°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VorläufigeDaten PreliminaryData VCES IC nom ICRM Ptot VGES
