FS25R12W1T7_B11
FS25R12W1T7_B11 is IGBT manufactured by Infineon.
Features
- Low VCEsat
- Trenchstop TMIGBT7
- Overloadoperationupto175°C
Mechanical Features
- 2.5k VAC1mininsulation
- Al2O3substratewithlowthermalresistance
- Highpowerdensity
- pactdesign
- Press FITcontacttechnology
Module Label Code
Barcode Code128
DMX-Code
Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week)
Digit 1-5 6-11 12-19 20-21 22-23
Datasheet .infineon.
Pleasereadthe Important Noticeand Warningsattheendofthisdocument
V2.0 2019-10-30
IGBT,Wechselrichter/IGBT,Inverter
Höchstzulässige Werte/Maximum Rated Values
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom Continuous DCcollectorcurrent
TH = 65°C, Tvj max = 175°C
Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
Vorläufige Daten Preliminary Data
VCES ICDC ICRM VGES
1200 25 50
+/-20
V A A V
Charakteristische Werte/Characteristic Values
Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage
IC = 25 A VGE = 15 V
Tvj = 25°C Tvj = 125°C Tvj = 175°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 0,525 m A, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 / 15 V, VCE = 600 V
Interner Gatewiderstand Internalgateresistor...
