Infineon Technologies FS75R12KS4
IGBT-Module
Technische Information / Technical Information IGBT-Module IGBT-modules FS75R12KS4 Vorläufige Daten Preliminary Data VCES 1200 75 100 150 500 +/-20 min. Tvj = 25°C Tvj = 125°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C Tvj = 25°C Tvj = 125°C td on 4,5 typ. 3,20 3,85 5,5 0,80 5,0 5,10 0,32 0,12 0,13 0,05 0,06 0,31 0,36 0,02 0,03 max. 3,70 6,5 5,0 400 V V V µC Ω nF nF mA nA µs µs µs µs µs µs µs µs mJ mJ mJ mJ V A A IGBT,Wechselrichter / IGBT,Inverter Höchstzulässige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Collector-emitter voltage Kollektor-Dauergleichstrom Continuous DC collector current Periodischer Kollektor-Spitzenstrom Repetitive peak collector current Gesamt-Verlustleistung Total power dissipation Gate-Emitter-Spitzenspannung Gate-emitter peak voltage Tvj = 25°C TC = 70°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C tP = 1 ms TC = 25°C, Tvj max = 15...