FS800R07A2E3 - IGBT-Module

Infineon

Key Features

Increased blocking voltage capability to 650V.
High Current Density.
Low Inductive Design.
Low Switching Losses.
Tvj op = 150°C.
Trench IGBT.

FS800R07A2E3 igbt-module by Infineon - Datasheet Preview

Datasheet Details

Part number	FS800R07A2E3
Manufacturer	Infineon
File Size	785.46 KB
Description	IGBT-Module
Datasheet	FS800R07A2E3 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FS8025B	USB Type-C PD Fast Charging Protocol Intelligent Trigger	Fansea
FS8107E	Low Power Phase-Locked Loop IC	Himark
FS8108	Low Power Phase-Locked Loop IC	Himark
FS8160	Dual Phase-locked Loop IC	Himark
FS8170	Low Power Phase-locked Loop IC	Himark

Other Datasheets by Infineon

Part Number	Description
FS820R08A6P2B	Drive Module
FS820R08A6P2LB	HybridPACK Drive

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FS800R07A2E3 HybridPACK™2ModulmitTrench/FeldstoppIGBT3undEmitterControlled3DiodeundNTC HybridPACK™2modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC VCES = 650V IC nom = 800A / ICRM = 1600A T T T TypischeAnwendungen • AnwendungenimAutomobil • Hybrid-Elektrofahrzeuge(H)EV • Hybrid-Nutzfahrzeuge • Motorantriebe TypicalApplications • AutomotiveApplications • HybridElectricalVehicles(H)EV • CommercialAgricultureVehicles • MotorDrives ElektrischeEigenschaften • ErhöhteSperrspannungsfestigkeitauf650V • HoheStromdichte • NiederinduktivesDesign • NiedrigeSchaltverluste • Tvjop=150°C • TrenchIGBT3 • VCEsatmitpositivemTemperaturkoeffizienten ElectricalFeatur