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FZ1000R45KL3_B5 - Highly insulated module

General Description

Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2022-08-15 FZ1000R45KL3_B5 Highly insulated module Table of contents Table of contents Description

Key Features

  • Electrical features - VCES = 4500 V - IC nom = 1000 A / ICRM = 2000 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient.
  • Mechanical features - AlSiC base plate for increased thermal cycling capability - High creepage and clearance distances - Isolated base plate - Package with CTI > 600 - Package with enhanced insulation of 10.4 kV AC 60 s Potential.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FZ1000R45KL3_B5 Highly insulated module Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 4500 V - IC nom = 1000 A / ICRM = 2000 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for increased thermal cycling capability - High creepage and clearance distances - Isolated base plate - Package with CTI > 600 - Package with enhanced insulation of 10.