FZ1200R17HP4_B2 Description
TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ1200R17HP4_B2 IHM-BModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode IHM-BmodulewithTrench/FieldstopIGBT4andEmitterControlleddiode VCES = 1700V IC nom = 1200A / ICRM.
FZ1200R17HP4_B2 Key Features
- ExtendedoperatingtemperatureTvjop
- LowVCEsat
- Enlargeddiodeforregenerativeoperation
- 4kVAC1mininsulation
- AlSiC base plate for increased thermal cycling
- PackagewithCTI>400
- Highcreepageandclearancedistances
- Highpowerandthermalcyclingcapability
- Highpowerdensity
- IHMBhousing