FZ1200R45HL3 Description
FZ1200R45HL3 IHM-BModulmitTrench/FeldstoppIGBT3undEmitterControlled3Diode IHM-BmodulewithTrench/FieldstopIGBT3andEmitterControlled3diode VCES = 4500V IC nom = 1200A / ICRM = 2400A PotentielleAnwendungen Hochleistungsumrichter.
FZ1200R45HL3 Key Features
- HighDCstability
- Highdynamicrobustness
- Highshort-circuitcapability
- LowVCEsat
- TrenchIGBT3
- VCEsatwithpositivetemperaturecoefficient
- AlSiC base plate for increased thermal cycling
- PackagewithCTI>600
- IHMBhousing
- Isolatedbaseplate