G15N60 Datasheet | Infineon

SGP15N60 SGW15N60 Fast IGBT in NPT-technology - 75% lower Eoff pared to previous generation bined with low conduction losses - Short circuit withstand time - 10 µs - Designed for: - Motor controls - Inverter - NPT-Technology for 600V applications offers: ..- very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 PG-TO-247-3-21 - Qualified according to JEDEC for target applications - Pb-free lead plating; Ro HS pliant - plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SGP15N60 SGW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C VCE 600V 600V IC 15A 15A VCE(sat) 2.3V 2.3V Tj 150°C 150°C Marking G15N60 G15N60 Package PG-TO-220-3-1 PG-TO-247-3-21 Symbol VCE IC Value 600 31 15 Unit V A ICpul s VGE EAS 62 62 ±20 85 V m J t SC Ptot 10 139 µs W VGE = 15V, VCC ≤ 600V, Tj ≤...