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G20N60HS - High Speed IGBT

Key Features

  • 2 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 400 EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 170A 200 100 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowe.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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  IRFP3006PbF 60V 2.1m 2.5m 270A 195A G VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)     D D G S S TO-247AC Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free Base Part Number   IRFP3006PbF   TO-247 Package Type G Gate D Drain S Source Standard Pack Form Quantity Tube 25   Orderable Part Number   IRFP3006PbF   Max. 270 190 195 1080 375 2.