Datasheet4U Logo Datasheet4U.com

G30T60 - IGW30N60T

Datasheet Summary

Features

  • Very low VCE(sat) 1.5V (typ. ).
  • Maximum Junction Temperature 175°C.
  • Short circuit withstand time 5s.
  • Designed for : - Frequency Converters - Uninterruptible Power Supply.

📥 Download Datasheet

Datasheet preview – G30T60

Datasheet Details

Part number G30T60
Manufacturer Infineon
File Size 461.21 KB
Description IGW30N60T
Datasheet download datasheet G30T60 Datasheet
Additional preview pages of the G30T60 datasheet.

📁 Similar Datasheet

  • G30 - Voltage-Controlled Attenuator Module (MACOM)
  • G3000TF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G3000TF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G300N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G300N04D3 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G300N04L - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G300P06 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G300P06T - P-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G3018 - N-CHANNEL MOSFET (GTM)
  • G3018K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
IGW30N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterruptible Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO247-3 Type IGW30N60T VCE 600V IC 30A VCE(sat),Tj=25°C Tj,max 1.
Published: |