Datasheet Details
| Part number | GTVA221701FA |
|---|---|
| Manufacturer | Infineon |
| File Size | 113.71 KB |
| Description | Thermally-Enhanced High Power RF GaN HEMT |
| Datasheet |
 GTVA221701FA Datasheet
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General Description
The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
Key Features
- input matching, high efficiency, and a thermally-enhanced package with earless flange. Features.
- Input matched.
- Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB.
- Capable of handling 10:1 VSWR @48 V, 140 W (CW) output power.
- GaN HEMT technology.
- High power density.
- High efficiency.
- RoHS-compliant Advance Specification Data Sheets describe products that.