GTVA221701FA
Description
The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Key Features
- Input matched
- Typical Pulsed CW performance, 1805 MHz, 48 V, single side
- Output power at P3dB = 200 W
- Efficiency = 70%
- Gain = 18 dB
- Capable of handling 10:1 VSWR @48 V, 140 W (CW) output power
- GaN HEMT technology
- High power density
- High efficiency
- 19 - Drain Efficiency ƒ1 = 1805 MHz, POUT = 50 W avg hD
