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GTVA221701FA - Thermally-Enhanced High Power RF GaN HEMT

Description

The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. Features.
  • Input matched.
  • Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB.
  • Capable of handling 10:1 VSWR @48 V, 140 W (CW) output power.
  • GaN HEMT technology.
  • High power density.
  • High efficiency.
  • RoHS-compliant Advance Specification Data Sheets describe products that.

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Datasheet preview – GTVA221701FA

Datasheet Details

Part number GTVA221701FA
Manufacturer Infineon
File Size 113.71 KB
Description Thermally-Enhanced High Power RF GaN HEMT
Datasheet download datasheet GTVA221701FA Datasheet
Additional preview pages of the GTVA221701FA datasheet.

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Full PDF Text Transcription

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advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz Description The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
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