H20R120R2
Overview
- Powerful monolithic Body Diode with very low forward voltage
- Body diode clamps negative voltages ®
- TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
- NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
- Low EMI 1
- Qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models : Applications:
- Inductive Cooking
- Soft Switching Applications Type IHW20N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s IFSM Symbol VCE IC Value 1200 40 20 60 60 40 20 30 50 130 120 ±20 ±25 330 -40...+175 -55...+175 260 W °C V Unit V A VCE 1200V IC 20A VCE(sat),Tj=25°C 1.55V Tj,max 175°C Marking H20R1202 Package PG-TO-247-3-21 C G E
