H25R1202 Datasheet (Infineon)

Part H25R1202
Description Reverse Conducting IGBT
Manufacturer Infineon
Size 400.40 KB
Available from Win Source.
Infineon

H25R1202 Overview

Key Features

  • Body diode clamps negative voltages
  • Trench and Fieldstop technology for 1200 V applications offers
  • very tight parameter distribution
  • high ruggedness, temperature stable behavior
  • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

Price & Availability

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