Infineon Technologies HYB18T256161AF-28
This chapter gives an overview of the 256-Mbit x16 GDDR2 DRAM product family and describes its main characteristics.| Part No. | HYB18T256161AF-28 |
|---|---|
| Datasheet | HYB18T256161AF-28 Download |
| Manufacturer |  Infineon Technologies |
| Description | 256-Mbit x16 GDDR2 DRAM |
| Buy | Stock & Price |
FEATURES
The 256-Mbit x16 GDDR2 DRAM is optimized for graphics applications and offers the following key features:● 2.0V +/- 0.1V VDD core voltage (HYB18T256161AF-22/-25/-28/-33)
● 2.0V +/- 0.1V VDDQ IO voltage (HYB18T256161AF-22/-25/-28/-33)
● 1.8V +/- 0.1V VDD core voltage (HYB18T256161AFL25/28/33)
● 1.8V +/- 0.1V VDDQ IO voltage (HYB18T256161AFL25/28/33)
● DLL-off mode operation support
● DRAM organisations with 16 data in/outputs
● Double Data Rate architecture: two data transfers per clock cycle, internal banks for concurrent operation
● CAS Latency: 5 and 6
● Burst Length: 4 and 8
● Differential clock inputs (CK and CK)
● Bi-directional, differential data strobes (DQS and DQS) are transmitted / received with data. Edge aligned with read data and center-aligned with write data.
● DLL aligns DQ and DQS transitions with clock
● DQS can be disabled for single-ended data strobe operation
● Commands entered on each positive clock edge, data and data mask are referenced to both edges o...
