Download the HYE25L256160AC datasheet PDF.
This datasheet also covers the HYE variant, as both devices belong to the same 256-mbit mobile-ram family and are provided as variant models within a single manufacturer datasheet.
General Description
improved “Simplified State Diagram” added relaxed Absolute Maximum Ratings (+0.5/
1.0 V instead of ±0.3 V relative to VDD/VSS) Note 4: relaxed over-/underswing delta to 2.0 V deleted VDD and VDDQ range above tables and partly replaced by note “(Recommended Operating Conditions unless otherwi
Full PDF Text Transcription for HYE25L256160AC (Reference)
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HYE25L256160AC. For precise diagrams, and layout, please refer to the original PDF.
Data Sheet, V1.1, April 2003 HYE25L256160AC 256-Mbit Mobile-RAM Extended Temperature Range Memory Products N e v e r s t o p t h i n k i n g . HYE25L256160AC Revision His...
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oducts N e v e r s t o p t h i n k i n g . HYE25L256160AC Revision History: Previous Version: Page all Page 13f Page 15 Page 18 Page 19 Page 20 Page 20 Page 20ff Page 22 Page 23f 2003-04-16 2001-11-23 V1.1 V1.0 Subjects (major changes since last version) applied new data sheet template Din-A4 Temperature Compensated Self Refresh with On-Chip Temperature Sensor Table Operation Definition extended by two rows “Clock Suspend Entry” and “Clock Suspend Exit”; Note 5 extended by “When this command is asserted during a burst cycle the device …” “Self Refresh” description improved “Simplified State Diagram” added relaxed Absolute
HYE25L256160AC Datasheet
