HYR1625640G Datasheet | Infineon

Overview The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including puter memory, personal puters, workstations, and other applications where high bandwidth and low latency are required. The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM™) devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with...