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HYS64V64220GBDL-7-D - 144 pin SO-DIMM SDRAM Modules

Key Features

  • r>.
  • 1 64 ms CLK tOH tLZ tHZ tDQZ 3 0 3.
  • 7 2 3 0 3.
  • 7 2 3 0 3.
  • 8 2 ns ns ns CLK 2, 6 Write Cycle Last Data Input to Precharge (Write without AutoPrecharge) tWR tDAL,min 14.
  • 15.
  • 15.
  • ns 7 Last Data Input to Activate (Write with AutoPrecharge) CLK 8 0.
  • CLK DQM Write Mask Latency tDQW Infineon Technologies 8 2002-08-06 HYS64V64.

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Full PDF Text Transcription for HYS64V64220GBDL-7-D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYS64V64220GBDL-7-D. For precise diagrams, and layout, please refer to the original PDF.

144 pin SO-DIMM SDRAM Modules HYS64V64220GBDL-7/7.5/8-D 512 MB PC100 / PC133 • u144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applic...

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mall Outline Dual-In-Line Synchronous DRAM Modules for notebook applications Two bank 64M x 64 non-parity module organisation suitable for use in PC100 and PC133 applications Performance: -7 PC133 2-2-2 fCK tAC Clock frequency (max.) Clock access time CAS latency = 2 & 3 133 5.4 -7.5 PC133 3-3-3 133 5.4 -8 PC100 2-2-2 100 6 Units MHz ns • • • • • Single +3.3V( ± 0.

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