IAUAN04S7N006
Key Features
- OptiMOSTM power MOSFET for automotive applications
- N-channel - Enhancement mode - Normal Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL2a up to 260°C peak reflow
- 175°C operating temperature
- RoHS compliant
- 100% Avalanche tested Potential Applications General automotive applications. Product Validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS RDS(on) ID (chip limited) 40 V 0.57 mΩ 410 A Type IAUAN04S7N006 Package PG-HSOF-5-1
