IAUC100N04S6N022
Features
- Opti MOS™
- power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 2.2 m W 100 A
PG-TDSON-8
- N-channel
- Enhancement mode
- Normal Level
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
Type
Package
IAUC100N04S6N022 PG-TDSON-8
Marking 6N04N022
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS
I D=20A, R G,min=25W
I AS
R G,min=25W
V GS
- P tot
T C=25°C
T j, T stg
- Value...
