Infineon Technologies IAUC100N08S5N043
Power Transistor
| Part No. | IAUC100N08S5N043 |
|---|---|
| Datasheet | IAUC100N08S5N043 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel - Enhancement mode● AEC Q101 qualified
● MSL1 up to 260°C peak reflow
● 175°C operating temperature
● Green product (RoHS compliant)
● 100% Avalanche tested IAUC100N08S5N043 Product Summary VDS RDS(on) ID 80 V 4.3 mW 100 A PG-TDSON-8 1 1 Type Package IAUC100N08S5N043 PG-TDSON-8 Marking 5N08043 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=10V T C=100 °C, V GS=10 V1) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T C=25 °C I D=50 A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value Unit 100 A 76 400 120 mJ 100 A ±20 V 125 W -55 ... +175 °C 55/175/56 Rev. 1.0 page 1 2018-07-24 IAUC100N08S5N043 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC - Values Unit min. typ. max. -...
