Infineon Technologies IAUC100N10S5L054
The parameter is not subject to production test - verified by design/characterization. For rare events and inrush currents, the value may be exceeded.| Part No. | IAUC100N10S5L054 |
|---|---|
| Datasheet | IAUC100N10S5L054 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ power MOSFET for automotive applications● N-channel - Enhancement mode - Logic Level
● MSL1 up to 260°C peak reflow
● 175 °C operating temperature
● Green product (RoHS compliant)
● 100% Avalanche tested Product Summary VDS RDS(on),max ID 100 V 5.4 mW 100 A PG-TDSON-8-34 1 1 Type Package Marking IAUC100N10S5L054 PG-TDSON-8-34 5N10L054 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current2) ID I D,pulse V GS=10 V, Chip limitation1,2) V GS=10V, DC current3) T a=85 °C, V GS=10 V, RthJA on 2s2p 2,4) T C=25 °C Avalanche energy, single pulse2) E AS I D=50 A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - Value Unit 101 A 100 17 400 64 mJ 52 A ±20 V 130 W -55 ... +175 °C Rev. 1.1 page 1 2021-06-18 IAUC100N10S5L054 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC...
