Infineon Technologies IAUC100N10S5N040
Power Transistor
| Part No. | IAUC100N10S5N040 |
|---|---|
| Datasheet | IAUC100N10S5N040 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel - Enhancement mode - Normal level● AEC qualified
● MSL1 up to 260°C peak reflow
● 100% Avalanche tested
● Feasible for automatic optical inspection (AOI) IAUC100N10S5N040 Product Summary VDS RDS(on) ID 100 V 4 m 100 A PG-TDSON-8 1 Type IAUC100N10S5N040 Package PG-TDSON-8 Marking 5N1N040 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage ID I D,pulse E AS I AS V GS T C=25°C, V GS=10V T C=100°C, V GS=10V T C=25°C I D=50A - Power dissipation P tot T C=25°C, T J =175°C Operating and storage temperature T j, T stg - Value Unit 100 A 100 400 234 mJ 100 A ±20 V 167 W -55 ... +175 °C Rev. 1.0 page 1 2018-06-12 IAUC100N10S5N040 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC - min. Values typ. Unit max. - - 0.9 K/W Electrical characteristics, at T j=25 °C, unle...
