Infineon Technologies IAUC120N04S6L008
The parameter is not subject to production test- verified by design/characterization.| Part No. | IAUC120N04S6L008 |
|---|---|
| Datasheet | IAUC120N04S6L008 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.8 m 120 A PG-TDSON-8● N-channel - Enhancement mode - Logic Level
● AEC Q101 qualified
● MSL1 up to 260°C peak reflow 1
● 175°C operating temperature
● Green Product (RoHS compliant) 1
● 100% Avalanche tested Type IAUC120N04S6L008 Package PG-TDSON-8 Marking 6N04L008 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=60A, R G,min=25 I AS R G,min=25 V GS - P tot T C=25°C T j, T stg - Value Unit 120 A 120 480 400 mJ 60 A ±16 V 150 W -55 ... +175 °C Rev. 1.0 page 1 2018-09-27 IAUC120N04S6L008 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA 6 cm2 cooling area3) min.
