Infineon Technologies IAUC120N06S5N017
The parameter is not subject to production test - verified by design/characterization. For rare events and inrush currents, the value may be exceeded.| Part No. | IAUC120N06S5N017 |
|---|---|
| Datasheet | IAUC120N06S5N017 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ power MOSFET for automotive applications● N-channel - Enhancement mode - Normal level
● MSL1 up to 260°C peak reflow
● 175 °C operating temperature
● Green product (RoHS compliant)
● 100% Avalanche tested Product Summary VDS RDS(on),max ID 60 V 1.7 mW 120 A PG-TDSON-8-43 1 1 Type IAUC120N06S5N017 Package PG-TDSON-8-43 Marking 5N06N017 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature Symbol Conditions ID I D,pulse V GS=10 V, Chip limitation1,2) V GS=10V, DC current3) T a=85 °C, V GS=10 V, R thJA on 2s2p2,4) T C=25 °C, t p= 100 µs E AS I D=60 A I AS - V GS - P tot T C=25 °C T j, T stg - Value Unit 226 A 120 30 757 345 mJ 120 A ±20 V 167 W -55 ... +175 °C Rev. 1.0 page 1 2020-05-04 IAUC120N06S5N017 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junctio...
