Infineon Technologies IAUC26N10S5L245
The parameter is not subject to production test - verified by design/characterization.| Part No. | IAUC26N10S5L245 |
|---|---|
| Datasheet | IAUC26N10S5L245 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ power MOSFET for automotive applications● N-channel - Enhancement mode - Logic Level
● MSL1 up to 260°C peak reflow
● 175 °C operating temperature
● Green product (RoHS compliant)
● 100% Avalanche tested Product Summary VDS RDS(on),max ID 100 V 24.5 mW 26 A PG-TDSON-8-33 1 1 Type IAUC26N10S5L245 Package Marking PG-TDSON-8-33 5N10L245 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Symbol Conditions ID V GS=10 V, Chip limitation1,2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS V GS=10V, DC current T a=85 °C, V GS=10 V, RthJA on 2s2p 2,3) T C=25 °C I D=10 A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - Value Unit 26 A 26 7 104 18 mJ 10 A ±20 V 40 W -55 ... +175 °C Rev. 1.1 page 1 2021-06-18 IAUC26N10S5L245 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC - Therm...
