Infineon Technologies IAUC28N08S5L230
The parameter is not subject to production test - verified by design/chracterization.| Part No. | IAUC28N08S5L230 |
|---|---|
| Datasheet | IAUC28N08S5L230 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ - power MOSFET for automotive applications● N-channel - Enhancement mode - Logic Level
● MSL1 up to 260°C peak reflow
● 175°C operating temperature
● Green product (RoHS compliant)
● 100% Avalanche tested Quality
FEATURES
● Infineon Automotive Quality● Extended qualification beyond AEC Q101
● Enhanced testing
● Advanced adhesion against delamination
● Complementary testing for board level reliability Product Summary VDS RDS(on) ID 80 V 23 mW 28 A PG-TDSON-8 1 1 Type IAUC28N08S5L230 Package PG-TDSON-8 Marking 5N08L230 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continous drain current Pulsed drain current1) ID I D,pulse T C=25°C, V GS=10V T C=100 °C, V GS=10 V1) T C=25°C Avalanche energy, single pulse1) E AS I D=14 A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev. 1.0 page 1 Value U...
