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IAUC28N08S5L230 - Power Transistor

Features

  • OptiMOS™ - power MOSFET for automotive.

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Datasheet preview – IAUC28N08S5L230

Datasheet Details

Part number IAUC28N08S5L230
Manufacturer Infineon
File Size 881.44 KB
Description Power Transistor
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IAUC28N08S5L230 OptiMOS™-5 Power-Transistor Features • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Quality Features • Infineon Automotive Quality • Extended qualification beyond AEC Q101 • Enhanced testing • Advanced adhesion against delamination • Complementary testing for board level reliability Product Summary VDS RDS(on) ID 80 V 23 mW 28 A PG-TDSON-8 1 1 Type IAUC28N08S5L230 Package PG-TDSON-8 Marking 5N08L230 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continous drain current Pulsed drain current1) ID I D,pulse T C=25°C, V GS=10V T C=100 °C, V GS=10 V1) T C=25°
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