Infineon Technologies IAUC41N06S5L100
The parameter is not subject to production test - verified by design/characterization.| Part No. | IAUC41N06S5L100 |
|---|---|
| Datasheet | IAUC41N06S5L100 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ power MOSFET for automotive applications● N-channel - Enhancement mode - Logic Level
● MSL1 up to 260°C peak reflow
● 175 °C operating temperature
● Green product (RoHS compliant)
● 100% Avalanche tested Product Summary VDS RDS(on),max ID 60 V 10 mW 41 A PG-TDSON-8-33 1 1 Type IAUC41N06S5L100 Package Marking PG-TDSON-8-33 5N06L100 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Symbol Conditions ID V GS=10 V, Chip limitation1,2) V GS=10V, DC current Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T a=85 °C, V GS=10 V, R thJA on 2s2p 2,3) T C=25 °C, tp= 100 µs I D=20 A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - Value Unit 41 A 41 12 115 37 mJ 41 A ±16 V 42 W -55 ... +175 °C Rev. 1.0 page 1 2020-05-05 IAUC41N06S5L100 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R t...
