Infineon Technologies IAUC60N04S6L039
The parameter is not subject to production test- verified by design/characterization.| Part No. | IAUC60N04S6L039 |
|---|---|
| Datasheet | IAUC60N04S6L039 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 4.0 mW 60 A PG-TDSON-8● N-channel - Enhancement mode - Logic Level
● AEC Q101 qualified
● MSL1 up to 260°C peak reflow 1
● 175°C operating temperature
● Green Product (RoHS compliant) 1
● 100% Avalanche tested Type IAUC60N04S6L039 Package PG-TDSON-8 Marking 6N04L039 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=12A, R G,min=25W Avalanche current, single pulse I AS R G,min=25W Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - Value 60 54 240 48.0 12 ±16 42 -55 ... +175 Unit A mJ A V W °C Rev. 1.0 page 1 2019-04-01 IAUC60N04S6L039 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction...
