Infineon Technologies IAUC60N04S6L045H
The parameter is not subject to production test - specified by design. For rare events and inrush currents the value may be exceeded.| Part No. | IAUC60N04S6L045H |
|---|---|
| Datasheet | IAUC60N04S6L045H Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 4.5 m 60 A PG-TDSON-8-57● Half-Bridge - N-channel - Enhancement mode - Logic Level
● AEC Q101 qualified
● MSL1 up to 260°C peak reflow
● 175°C operating temperature
● Green Product (RoHS compliant)
● 100% Avalanche tested Type IAUC60N04S6L045H Package Marking PG-TDSON-8-57 6N04L045 Maximum ratings per channel, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature ID I D,pulse E AS I AS V GS P tot T j, T stg V GS=10V, Chip Limitation1,2) V GS=10V, DC current3) Ta=85°C, VGS=10V, RthJA on 2s2p2,4) T C=25°C, t p =100µs I D=12A, R g,min=25Ω R g,min=25Ω - T C=25°C - Value 80 60 18 193 53 12 ±16 52 -55 ... +175 Unit A mJ A V W °C Rev. 1.1 page 1 2025-02-19 IAUC60N04S6L045H Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC - Thermal resistance, junction - ambient4) R thJA - min.
