Infineon Technologies IAUC60N04S6N050H
The parameter is not subject to production test - specified by design. For rare events and inrush currents the value may be exceeded.| Part No. | IAUC60N04S6N050H |
|---|---|
| Datasheet | IAUC60N04S6N050H Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 5.0 mW 60 A PG-TDSON-8-57● Half-Bridge - N-channel - Enhancement mode - Normal Level
● AEC Q101 qualified
● MSL1 up to 260°C peak reflow
● 175°C operating temperature
● Green Product (RoHS compliant)
● 100% Avalanche tested Type Package Marking IAUC60N04S6N050H PG-TDSON-8-57 6N04N050 Maximum ratings per channel, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature ID I D,pulse V GS=10V, Chip Limitation1,2) V GS=10V, DC current3) Ta=85°C, VGS=10V, RthJA on 2s2p2,4) T C=25°C, t p =100µs E AS I D=12A, R g,min=25Ω I AS R g,min=25Ω V GS - P tot T C=25°C T j, T stg - Value 74 60 16 171 53 12 ±20 52 -55 ... +175 Unit A mJ A V W °C Rev. 1.0 page 1 2020-09-22 IAUC60N04S6N050H Parameter Symbol Conditions Thermal characteri...
