Infineon Technologies IAUC70N08S5N074
Power Transistor
| Part No. | IAUC70N08S5N074 |
|---|---|
| Datasheet | IAUC70N08S5N074 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel - Enhancement mode● AEC Q101 qualified
● MSL1 up to 260°C peak reflow
● 175°C operating temperature
● Green product (RoHS compliant)
● 100% Avalanche tested IAUC70N08S5N074 Product Summary VDS RDS(on) ID 80 V 7.4 mW 70 A PG-TDSON-8 1 1 Type IAUC70N08S5N074 Package PG-TDSON-8 Marking 5N08074 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V T C=100 °C, V GS=10 V1) Pulsed drain current1) Avalanche energy, single pulse1) I D,pulse E AS T C=25 °C I D=35 A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value Unit 70 A 47 280 57 mJ 70 A ±20 V 83 W -55 ... +175 °C 55/175/56 Rev. 1.0 page 1 2018-07-24 IAUC70N08S5N074 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case R thJC - Values Unit min. typ. max. - - 1.8 K/W...
