Infineon Technologies IAUC90N10S5N062
Power Transistor
| Part No. | IAUC90N10S5N062 |
|---|---|
| Datasheet | IAUC90N10S5N062 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ - power MOSFET for automotive applications VDS RDS(on) ID 100 V 6.2 mW 90 A PG-TDSON-8● N-channel - Enhancement mode - Normal level
● AEC Q101 qualified
● MSL1 up to 260°C peak reflow
● Green product (RoHS compliant)
● 100% Avalanche tested 1 1
● Feasible for automatic optical inspection (AOI) Type IAUC90N10S5N062 Package PG-TDSON-8 Marking 5N10N062 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage ID I D,pulse E AS I AS V GS T C=25°C, V GS=10V T C=100°C, V GS=10V T C=25°C I D=45A - Power dissipation P tot T C=25°C, T J =175°C Operating and storage temperature T j, T stg - Value Unit 90 A 66 360 112 mJ 47 A ±20 V 115 W -55 ... +175 °C Rev. 1.0 page 1 2019-07-23 IAUC90N10S5N062 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case R thJC Thermal resistance, junct...
