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IAUCN04S6N007T - Automotive MOSFET

General Description

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Key Features

  • OptiMOS™ power MOSFET for automotive.

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Full PDF Text Transcription for IAUCN04S6N007T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IAUCN04S6N007T. For precise diagrams, and layout, please refer to the original PDF.

IAUCN04S6N007T Automotive MOSFET OptiMOS™ 6 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • ...

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tomotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested • Top Side Cooling Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS RDS(on) ID (chip limited) Type IAUCN04S6N007T 40 V 0.75 mΩ 390 A Package PG-LHDSO-10-3 PG-LHDSO-10-3 1 Pins 10 - 6 & Tab on Drain Marking 6A4 Data Sheet Please read the Important

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