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IAUCN04S6N013T
Automotive MOSFET
OptiMOS™ 6 Power-Transistor
Features
• OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested • Top Side Cooling
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS RDS(on) ID (chip limited)
Type IAUCN04S6N013T
40 V 1.32 mΩ 230 A
Package PG-LHDSO-10-1
PG-LHDSO-10-1
1
Pins 10 - 6 & Tab on Drain
Marking 6C4
Data Sheet
Please read the Important Notice and Warnings at the end of this document
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