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IAUCN08S7N013 - Automotive MOSFET

General Description

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Key Features

  • OptiMOS™ power MOSFET for automotive.

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Full PDF Text Transcription for IAUCN08S7N013 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IAUCN08S7N013. For precise diagrams, and layout, please refer to the original PDF.

RESTRICTED IAUCN08S7N013 Automotive MOSFET OptiMOS™ 7 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Norma...

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FET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS RDS(on) ID (chip limited) Type IAUCN08S7N013 80 V 1.30 mΩ 274 A Package PG-TDSON-8-53 PG-TDSON-8-53 1 1 8765 1234 Marking 7N08N013 Data Sheet Please read the Important Notice and Warnings

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