IAUCN08S7N013
Features
- Opti MOS™ power MOSFET for automotive applications
- N-channel
- Enhancement mode
- Normal Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Ro HS pliant
- 100% Avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS RDS(on) ID (chip limited)
Type IAUCN08S7N013
80 V 1.30 mΩ 274 A
Package PG-TDSON-8-53
PG-TDSON-8-53
1 1
8765 1234
Marking 7N08N013
Data Sheet
Please read the Important Notice and Warnings at the end of this document
.infineon./mosfets
Rev. 1.0 2023-10-19
Opti MOS™ 7 Automotive Power MOSFET, 80 V
Table of Contents
Description
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