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IAUCN08S7N045T - Automotive MOSFET

General Description

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Key Features

  • OptiMOSTM power MOSFET for automotive.

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Full PDF Text Transcription for IAUCN08S7N045T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IAUCN08S7N045T. For precise diagrams, and layout, please refer to the original PDF.

IAUCN08S7N045T Automotive MOSFET OptiMOSTM 7 Power-Transistor Features • OptiMOSTM power MOSFET for automotive applications • N-channel - Enhancement mode - Normal Level ...

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automotive applications • N-channel - Enhancement mode - Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested Potential Applications General automotive applications. Product Validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS RDS(on) ID (chip limited) 80 V 4.54 mΩ 103 A Type IAUCN08S7N045T Package PG-LHDSO-10-1 PG-LHDSO-10-1 Marking 7X8 Data Sheet Please read the Important Notice and Warnings at the end of this docume

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