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IAUCN10S5L094D - Automotive MOSFET

General Description

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Key Features

  • OptiMOSTM power MOSFET for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IAUCN10S5L094D Automotive MOSFET OptiMOSTM 5 Power-Transistor Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested Potential Applications General automotive applications. Product Validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS RDS(on) ID (chip limited) 100 V 9.40 mΩ 66 A Type IAUCN10S5L094D Package PG-TDSON-8-60 PG-TDSON-8-60 Marking 5N1L094D Data Sheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/mosfets Rev. 1.