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IAUMN08S5N012G
Automotive MOSFET
OptiMOS™ 5 Power-Transistor
Features
• OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL2 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS RDS(on) ID (chip limited)
Type IAUMN08S5N012G
80 V 1.2 mΩ 370 A
Package PG-HSOG-4-1
PG-HSOG-4-1 Insert image
1 1
TAB
1234
Marking 5N08N012
Data Sheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com/mosfets
Rev. 1.