IAUMN10S5N016G
Features
- Opti MOS™ power MOSFET for automotive applications
- N-channel
- Enhancement mode
- Normal Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL2 up to 260°C peak reflow
- 175°C operating temperature
- Ro HS pliant
- 100% Avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS RDS(on) ID (chip limited)
Type IAUMN10S5N016G
100 V 1.6 mΩ 310 A
Package PG-HSOG-4-1
PG-HSOG-4-1 Insert image
Marking 5N10N016
Data Sheet
Please read the Important Notice and Warnings at the end of this document
.infineon./mosfets
Rev. 1.0 2024-05-02
Opti MOS™ 5 Automotive Power MOSFET, 100 V
Table of Contents
Description
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