Datasheet Summary
OptiMOS™-5 Power-Transistor
Features
- OptiMOS™ power MOSFET for automotive applications
- N-channel
- Enhancement mode
- Normal Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on) ID
100 V 1.5 mW 300 A
PG-HDSOP-16-2
Type IAUS300N10S5N015T
Package PG-HDSOP-16-2
Marking 5N10015
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current Pulsed drain current2)
ID I D,pulse
V GS=10 V, Chip limitation1,2) V GS=10V, DC current3)...