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IAUTN06S5N008 - Automotive MOSFET

General Description

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Key Features

  • OptiMOS™ power MOSFET for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IAUTN06S5N008 Automotive MOSFET OptiMOS™ 5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% avalanche tested PG-HSOF-8-1 Tab 1 8 8 Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Tab 1 Product Summary VDS RDS(on) ID (chip limited) 60 V 0.76 mΩ 510 A Type IAUTN06S5N008 Package PG-HSOF-8-1 Marking 5N06N008 Data Sheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/mosfets Rev. 1.