IAUTN06S5N008 Description
Thermal characteristics . Package outline & footprint . DIN IEC 68-1 ID V GS=10 V, Chip limitation1,2) V GS=10V, DC current3) I D,pulse E AS I AS V GS P tot T j, T stg T a=100 °C, V GS=10 V, R thJA.
IAUTN06S5N008 Key Features
- OptiMOS™ power MOSFET for automotive