Infineon Technologies IDB09E60
Fast Switching EmCon Diode
| Part No. | IDB09E60 |
|---|---|
| Datasheet | IDB09E60 Download |
| Manufacturer |  Infineon Technologies |
| Description | Fast Switching EmCon Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C Symbol VRRM IF Value 600 19.3 13 Unit V A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave I FSM I FRM Ptot 40 29.5 W 57.7 32.7 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation TC=25°C TC=90°C Operating and storage temperature Soldering temperature 1.6mm(0.063 in.) from case for 10s Tj , Tstg TS -55...+175 255 °C °C Rev.2 Page 1 2003-07-31 IDP09E60 IDB09E60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. 35 max. 2.6 62 62 - Unit K/WELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=600V, Tj=25°C V R=600V, Tj=150°C Symbol min.
