Infineon Technologies IDB23E60
Fast Switching EmCon Diode
| Part No. | IDB23E60 |
|---|---|
| Datasheet | IDB23E60 Download |
| Manufacturer |  Infineon Technologies |
| Description | Fast Switching EmCon Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C Symbol VRRM IF Value 600 41 28 Unit V A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave I FSM I FRM Ptot 89 65 W 115 65 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation TC=25°C TC=90°C Operating and storage temperature Soldering temperature 1.6mm(0.063 in.) from case for 10s Tj , Tstg TS -55... +175 255 °C °C Rev.2 Page 1 2003-07-31 IDP23E60 IDB23E60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA - Values typ. max. 1.3 75 50 Unit K/WELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=600V, Tj=25°C V R=600V, Tj=150°C Symbol min. IR VF - Values typ. max. Unit µA 1.5 1.5 50 1900...
