Infineon Technologies IDC04S60CE
Schottky Diode
| Part No. | IDC04S60CE |
|---|---|
| Datasheet | IDC04S60CE Download |
| Manufacturer |  Infineon Technologies |
| Description | Schottky Diode |
| Buy | Stock & Price |
FEATURES
: Revolutionary semiconductor material Silicon Carbide● Switching behavior benchmark
● No reverse recovery
● No temperature influence on the switching behavior
● No forward recovery
● High surge current capability
●
APPLICATIONS
:● SMPS, PFC, snubber C A Chip Type IDC04S60CE VBR 600V IF 4A Die Size 1.146 x 0.968 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.146x 0.968 0.909 x 0.731 1.11 355 100 6190 Photoimide 3200 nm Al Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm2 Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009 IDC04S60CE
MAXIMUM RATINGS
Parameter Repetitiv...
