Infineon Technologies IDC05S60C
SiC Schottky Diode
FEATURES
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● Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability
APPLICATIONS
:● SMPS, PFC, snubber C A Chip Type IDC05S60C VBR 600V IF 5A Die Size 1.45 x 1.162 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment DataSheet4U.com 1.45x 1.162 mm 1.213 x 0.925 1.68 / 1.22 355 75 0 2182 pcs Photoimide 3200 nm Al mm µm mm deg 2 DataSh ee 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C DataSheet4U.com Edited by INFINEON Technolog...