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IDDD16G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF . The CoolSiC™ Schottky diode V G has been designed to complement our V and V CoolMOS™ families, meeting the most stringent application requirements in this voltage range.
Table 1
Key performance parameters
Parameter
Value
Unit
VRRM
650
V
QC (VR = 400 V)
21.5
nC
EC (VR = 400 V)
4.
IDDD16G65C6 Datasheet
