IDFW40E65D1E - Diode

Description

Features

A.
650V Emitter Controlled technology.
Temperature stable behavior of key parameters.
Low forward voltage (VF).
Low reverse recovery charge (Qrr).
Low reverse recovery current (Irrm).
Softness factor >1.
Maximum junction temperature 175°C.
2500 VRMS electrical isolation, 50/60 Hz, t=1 min.
100 % tested isolated mounting surface.
Pb-free lead plating; RoHS compliant C Potential.

Infineon

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Part number	IDFW40E65D1E
Manufacturer	Infineon
File Size	1.46 MB
Description	Diode
Datasheet	IDFW40E65D1E Datasheet
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IDFW40E65D1E EmitterControlledDiodeRapid1AdvancedIsolation Rapidswitchingemittercontrolleddiodeinfullyisolatedpackage Features: A •650VEmitterControlledtechnology •Temperaturestablebehaviorofkeyparameters •Lowforwardvoltage(VF) •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •Softnessfactor>1 •Maximumjunctiontemperature175°C •2500VRMSelectricalisolation,50/60Hz,t=1min •100%testedisolatedmountingsurface •Pb-freeleadplating;RoHScompliant C PotentialApplications: •AirConditioningPFC •GeneralPurposeDrives(GPD) Packagepindefinition: •Pin1-notconnected •Pin2-cathode •Pin3-anode Fully isolated package TO-247 ProductValidation: Qualifiedforindustrialapplicationsaccording

Published: Jun 10, 2020 |