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IDH04G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™ Schottky diode 650 V G6 has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
Table 1
Key performance parameters
Parameter
Value
Unit
VRRM
650
V
QC (VR = 400 V)
6.9
nC
EC (VR = 400 V)
1.
IDH04G65C6 Datasheet
