IDH05G65C5 - Silicon Carbide Diode

Product Overview

Infineon

Datasheet Details

Part number	IDH05G65C5
Manufacturer	Infineon
File Size	1.14 MB
Description	Silicon Carbide Diode
Datasheet	IDH05G65C5 Datasheet
Additional preview pages of the IDH05G65C5 datasheet.

Product details

Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology.The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).The new thinQ!™ Generation 5 has been designed

Features

Revolutionary semiconductor material - Silicon Carbide.
Benchmark switching behavior.
No reverse recovery/ No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Jun 14, 2020 |